 技術摘要： |
一種於矽基板上成長氮化物的製作方法,其包括以下步驟。提供一矽基板。形成一緩衝層於矽基板上,在緩衝層的成膜過程中包括多階段的溫度調變,且各階段的溫度調變包括逐步遞減。形成一氮化物於緩衝層上。
The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.
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聯繫方式 |
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研發處產學合作總中心 |
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(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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