|
 利用蝕刻矽基版表面提高元件發光效率之方法
|
刊登日期：2014/05/21 |
|
|
|
|
|
| ‧ 專利名稱 |
利用蝕刻矽基版表面提高元件發光效率之方法 |
| ‧ 專利證書號 |
201062
US6,905,977B2
|
| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
中華民國 (2003/02/25)
美國 (2003/03/26)
|
|
|
| |
| ‧ 發明人/PI |
林清富 ,梁奕智 ,黃武平 ,謝信弘 ,
|
| ‧ 單位 |
光電工程學研究所
|
| ‧ 簡歷/Experience |
|
|
| 技術摘要 / Our Technology： |
本發明係揭露一種利用蝕刻矽基板表面提高元件發光效率之方法，其係在形成奈米粒子層以及導電層之前，先利用化學蝕刻移除矽基板表面能階或表面缺限，以減少矽基板表面的非幅射式電子電洞之復合中心，令金氧矽發光元件的幅射式電子電洞之復合比例提高，使得金氧矽結構產生光時，發光效率大幅提高。且該蝕刻步驟亦可在基板上造成奈米級的表面結構，以提高電子電洞對與聲子碰撞機率，並使得發光效率相對增強。五、(一)、本案代表圖為：第＿＿＿一(d)＿＿＿圖
(二)、本案代表圖之元件代表符號簡單說明：
10 半導體矽基板
12 奈米粒子層
14 氧化鋁層
16 金屬層
The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.
|
| 專利簡述 / Intellectual Properties： |
|
| |
聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
|
| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
|
|
| |
|
| |
 |
專利行銷平台