極紫外線干涉成像裝置與方法
  ‧ 專利名稱 干涉成像裝置及其系統
  ‧ 專利證書號 I467154
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2011/08/31)
  ‧ 發明人 王譽達 , 張俊霖 , 黎延垠 , 黃升龍 , 孫繼文,
 
技術摘要:
一種干涉成像裝置,其包括射源裝置與成像裝置。射源裝置為極紫外線射源並產生輸入射源。成像裝置將所接收的輸入射源分為參考射束與樣本射束輻射單元,並具有參考路徑輻射單元、樣本路徑輻射單元與輻射感測器,其中此成像裝置之反射或聚焦元件皆為使用特定材料組合之多層膜片。樣本路徑輻射單元可供設置待測物,且待測物可反射樣本射束。參考射束與樣本射束分別行經於參考路徑輻射單元與樣本路徑輻射單元,並聚焦於輻射感測器,以使輻射感測器藉此獲得帶有待測物結構資訊的干涉資訊。
An interference imaging apparatus including an emission source apparatus and an imaging apparatus is illustrated, wherein the emission source apparatus is an extreme ultraviolet (EUV) emission source, and generates an input emission source. The imaging apparatus divides a received input emission source to generate a reference emission beam and a sample emission beam, and has a reference path radiation unit, a sample path radiation unit, and an optical detector, wherein the reflection and focusing elements in the imaging apparatus are multi-layer lens composed of the specific material. The sample path radiation unit is provided to locate a sample, and the sample reflects the sample emission beam. The reference emission beam and the sample emission beam respectively pass through the reference path radiation unit and the sample path radiation unit, and then focus on the photo detector, such the photo detector captures the interference information having the sample structure information with the reference emission beam.



聯繫方式
聯絡人: 研發處產學合作總中心 電話: (02)3366-9949
地 址: 10087台北市中正區思源街18號 臺大水源校區思源樓3樓