 技術摘要 / Our Technology： |
本發明提出一種測量氧化層厚度的方法，用於測量金氧半電容元件之氧化層的未知厚度。首先，產生電壓電流對應關係，所述電壓電流對應關係對應指示複數個第一閘極電壓與複數個第一漏電流密度。接著，將每一個第一漏電流密度分別對第一閘極電壓進行微分運算。接著，自多個第一閘極電壓中，選擇第一氧化層平能帶電壓對應微分後之多個第一漏電流密度的最小值。接著，依據第一氧化層平能帶電壓，自電壓電流對應關係中選擇目標漏電流密度。最後，將目標漏電流密度代入預設查找表，以計算氧化層的未知厚度。藉此，本發明可推算出金氧半電容元件之氧化層的各種厚度。The present invention discloses a method for extracting unknown dielectric thickness of a metal oxide semiconductor. First, the present invention generates a current-voltage relationship for indicating a plurality of first gate voltages and corresponding first leakage current densities. And, the present invention respectively differentiates each of the first leakage current densities with respect to the corresponding first gate voltage. And, the present invention selects a first oxide flat-band voltage, corresponding to the smallest differentiated first leakage current density, among the first gate voltages. And, the present invention selects a target leakage current density among the first leakage current densities according to the first oxide flat-band voltage. Finally, the present invention searches a preset lookup table with the target leakage current density to calculate the dielectric thickness of the metal oxide semiconductor. Accordingly, various dielectric thickness of the metal oxide semiconductor can be calculated by using the present invention.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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