利用載子重分布調變發光波長之二極不同寬度多層半導體量子井雷射
  ‧ 專利名稱 利用載子重分布調變發光波長之二極不同寬度多層半導體量子井雷射
  ‧ 專利證書號 I225723
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2002/04/12)
美國 (2002/08/13)
日本 (2002/12/27)
  ‧ 發明人 林清富, 吳秉叡,
 
技術摘要:
本發明係提供一種利用載子重分布調變發光波長之二極不同寬度多層半導體量子井雷射,其係在一半導體基板上製作不同寬度之至少兩組多層量子井結構,使位於該多層量子井內之載子分布,可依據外面環境的改變而產生載子重新分布,發光波長就會隨之改變,進而決定該不同寬度量子井之半導體雷射波長,以達到波長調變之目的。因此,本發明係利用雷射波長的急劇變化與發光效率的相似特性,可在光開關或光通訊之應用上有相當大的空間,且應用性更佳。
A kind of multi-layered semiconductor quantum well laser with two-poles having different widths is disclosed in the present invention, in which carrier redistribution is used to modulate the light-emission wavelength. At least two sets of multi-quantum well structures with different widths are fabricated on a semiconductor substrate such that the carrier redistribution in the multi-quantum well is generated according to the change of the external environment so as to change the wavelength of light-emission. Thus, the wavelength of semiconductor laser having different quantum widths is determined to reach the purpose of wavelength modulation. Therefore, the present invention uses the abrupt change of laser wavelength and the similar characteristic of light-emission efficiency such that it can have considerably large application in optical switch or optical communication, and has even better applications.



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