增進光電元件中光吸收層特性之技術與包含其光吸收層之光電材料
  ‧ 專利名稱 增進光電元件中光吸收層特性之技術與包含其光吸收層之光電材料
  ‧ 專利證書號 I500170
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2012/11/20)
美國 (2012/11/21)
  ‧ 發明人 呂宗昕, 陳富珊,
 
技術摘要:
A technique for enhancing the characterization of the light absorber layers and the solar cells employing the light absorber layers are provided. A method for preparing the light absorber layers includes that bismuth-doped IB-IIIA-VIA compounds are synthesized via heating Group IB, Group IIIA and bismuth compound in an atmosphere containing Group VIA species. Additionally, a technique for preparing a solar cell employing IB-IIIA-VIA compounds containing bismuth species, that are prepared via the aforementioned method and further applied to manufacture photovoltaic to materials, is also provided.




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