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Transition metal dichalcogenide transistors with nanometer-size channel lengths fabricated on 2-D crystal hetero-structures |
刊登日期:2017/02/21 |
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‧ 專利名稱 |
Semiconductor device structure and method for forming the same |
‧ 專利證書號 |
9577049B1
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‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2016/01/06) 中華民國 (2016/12/22) 中國 (2016/12/30)
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‧ 發明人 |
林時彥, 吳崇榮, 劉繼文, |
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技術摘要: |
提供半導體裝置結構,半導體裝置結構包含基底。半導體裝置結構包含半導體層位於基底上方,半導體層包含過渡金屬硫屬化物。半導體裝置結構包含源極電極和汲極電極位於半導體層上方並連接半導體層,且透過間隙彼此間隔開,源極電極和汲極電極由石墨烯製成。
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a semiconductor layer over the substrate. The semiconductor layer includes a transition metal chalcogenide. The semiconductor device structure includes a source electrode and a drain electrode over and connected to the semiconductor layer and spaced apart from each other by a gap. The source electrode and the drain electrode are made of graphene.
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聯繫方式 |
聯絡人:
研發處產學合作總中心 |
電話:
(02)3366-9949 |
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地 址:
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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