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Ferroelectoricity and antiferroelectoricity in oxide thin films
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刊登日期:2021/08/24 |
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‧ 專利名稱 |
Ferroelectoricity and antiferroelectoricity in oxide thin films |
‧ 專利證書號 |
US11855171B2 US11101362B2
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‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2018/12/26) 中華民國 (2019/04/23) 中國 (2019/06/25) 美國 (2021/08/11)
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‧ 發明人/PI |
陳敏璋,易聖涵,呂承軒,
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‧ 單位 |
台積電-臺灣大學聯合研發中心
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‧ 簡歷/Experience |
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技術摘要 / Our Technology: |
A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.
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專利簡述 / Intellectual Properties: |
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聯繫方式 / Contact: |
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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Email:ordiac@ntu.edu.tw |
電話/Tel:02-3366-9945 |
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