Ferroelectoricity and antiferroelectoricity in oxide thin films
刊登日期:2021/08/24
  ‧ 專利名稱 Ferroelectoricity and antiferroelectoricity in oxide thin films
  ‧ 專利證書號 US11855171B2
US11101362B2
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
美國 (2018/12/26)
中華民國 (2019/04/23)
中國 (2019/06/25)
美國 (2021/08/11)
 
  ‧ 發明人/PI 陳敏璋,易聖涵,呂承軒,
  ‧ 單位 台積電-臺灣大學聯合研發中心
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.



專利簡述 / Intellectual Properties:




 

聯繫方式 / Contact:
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