 技術摘要 / Our Technology： |
本案提供一種長晶設備及一種長晶的方法。該長晶設備係用以使一原料長晶，且使垂直於該原料生長方向之平面的外部溫度高於內部溫度。該長晶的方法，包括：在一原料長晶的過程中，使垂直於該原料生長方向之平面的外部溫度高於內部溫度。
A device for crystal growth and a method for the same are provided. The device for crystal growth makes a material grow a crystal and makes the temperature at the inner area of the plane lower than that at outer area of the plane, wherein the plane is perpendicular to the growth direction of the material. The method for crystal growth includes the step of making the temperature at the inner area of the plane lower than that at outer area of the plane during the crystal growth process, wherein the plane is perpendicular to the growth direction of the material.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台