具有奈米點之光電電池及形成方法
刊登日期:2014/05/21
  ‧ 專利名稱 具有奈米點之光電電池及形成方法
  ‧ 專利證書號 I397201
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2009/05/26)
美國 (2009/07/03)
 
  ‧ 發明人/PI 林唯芳 ,周卓煇,王唯本,林鋕峰,
  ‧ 單位 材料科學與工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
本發明提供一種具有奈米點之光電電池,其係具有一光電轉換層以及一對電極。該光電轉換層係將入射光轉換成複數個電洞-電子對,該光電轉換層內具有一電洞傳導層以傳遞電洞,該電洞傳導層具有複數個奈米點。該對電極係分別偶接於該光電轉換層之兩側以分別傳導電子與電洞。在另一實施例中,本發明更提供該光電電池之形成方法,其係將奈米點混合於電洞傳導材料所形成的溶液中,再於導電基材形成具有奈米點的電洞傳導層。利用本發明之光電電池可以增加電洞的傳導率進而提升光電電池之效率。
The present invention provides a photovoltaic cell comprising a photovoltaic conversion layer and a pair of electrodes. The photovoltaic conversion layer, being capable of converting incident light into a plurality hole-electron pairs, comprises a hole transport layer including a plurality of nanodots mixed therein for transporting the holes generated from the photovoltaic effect. The pair of electrodes are coupled respectively to two sides of the photovoltaic conversion layer for conducting holes and electrons. In another embodiment, the present invention further provides a method for forming the photovoltaic cell, wherein the nanodots are mixed in a solution formed of a hole transport material and then a hole transport layer having the nanodots is formed on a conductive substrate. In the photovoltaic cell having nanodots of the present invention, the hole mobility is enhanced so as to improve the efficiency of the photovoltaic cell.




專利簡述 / Intellectual Properties:




 

聯繫方式 / Contact:
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