A new layer design for achieving unidirectional field-free spin-orbit torque switching in magnetic device with perpendicular magnetic anisotropy
  ‧ 專利名稱 在具有垂直異向性之磁性元件中達成單向性零外加廠自旋軌道矩翻轉之新式膜層設計
  ‧ 公開號 US2022/0376170A1
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
美國 (2021/05/18)
美國 (2022/05/09)
  ‧ 發明人/PI 白奇峰,陳天玥,廖唯邦
  ‧ 單位 材料科學與工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
A magnetic structure capable of field-free spin-orbit torque switching includes a spin-orbit coupling base layer and a ferromagnetic layer formed thereon. The spin-orbit coupling base layer is made from a particular crystal material. The ferromagnetic layer has magnetization perpendicular to a plane coupled to the spin-orbit coupling base layer, and is made from a particular ferromagnetic material with perpendicular magnetic anisotropy. The perpendicular magnetization of the ferromagnetic layer is switchable by an in plane current applied to the spin-orbit coupling base layer without application of an external magnetic field. A memory device and a production method regarding the magnetic structure are also provided.

專利簡述 / Intellectual Properties:


聯繫方式 / Contact:
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU
Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945