‧ 專利名稱 V頻帶射頻端靜電放防護低雜訊放大器
  ‧ 專利證書號 I391031
US 7,952,845 B2
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
中華民國 (2009/06/15)
美國 (2009/11/03)
  ‧ 發明人/PI 黃柏智,王暉,
  ‧ 單位 電信工程學研究所
  ‧ 簡歷/Experience
技術摘要 / Our Technology:

A V-band radio frequency (RF) electrostatic discharge (ESD) protection circuit uses meander inductors and diodes connecting in series to provide ESD protection. When operated in low frequency, the static electricity input from a RF pad may discharge to ground or to a voltage VDD through the meander inductor and the diode, so that a core circuit is not damaged by ESD. When operated in high frequency, the high frequency stray effect of the core circuit is substantially reduced due to impedance isolation generated by the meander inductors. Therefore, a low-noised amplifier (LNA) can receive an accurate high frequency input signal.

專利簡述 / Intellectual Properties:


聯繫方式 / Contact:
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU
Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945