 技術摘要： |
一種石墨烯電晶體,包括:一源極、一汲極、一石墨烯層、一絕緣層、一閘極以及至少一摻雜層。該石墨烯層設置於該源極與該汲極之間。該閘極與該石墨烯層、該源極及該汲極之間透過該絕緣層分隔。該至少一摻雜層設置在該石墨烯層之上方及下方之至少一者,用於提供摻雜載子給該石墨烯層。該摻雜層包括非化學計量比化合物。本發明之石墨烯電晶體具有較佳之穩定性且不易受週遭環境的影響。
Disclosed is a graphene transistor. The graphene transistor includes a source electrode, a drain electrode, a graphene layer, an insulating layer, a gate electrode and at least one doping layer. The graphene layer is disposed between the source electrode and the drain electrode. The gate electrode is separated from the graphene layer, the source electrode and the drain electrode by the insulating layer. The doping layer is disposed on the graphene layer or beneath the graphene layer for providing dopants for the graphene layer. The doping layer includes nonstoichiometric compounds. The graphene transistor of the present invention has a superior air stability and is not easily affected by environment.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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