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 Single-crystal ALD-Y2O3 on GaAs(001)-4x6 |
刊登日期：2017/11/30 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
11,081,339
10,283,349 B2
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2016/05/27)
美國 (2019/04/24)
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| ‧ 發明人 |
陳冠雄, 洪銘輝, 郭瑞年, 林延勳 , 吳紹筠, |
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| 技術摘要： |
A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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