 技術摘要： |
本發明係提供一種設計奈米晶體結構之前處理方法，該方法係用以取得一奈米晶體結構在與光作用後，其在空間中的電場與磁場分佈。該前處理方法係包括：步驟A：定義出一奈米晶體結構與光交互作用後，所產生之電磁場與該奈米晶體結構之晶體晶格大小、晶格排列與邊界長度之間的關係；以及步驟B：根據步驟A所定義之關係，求出該電磁場的波形。利用上述之方法，可以取得奈米晶體結構與光交互作用後之電磁波遠場與近場分佈，進而設計出光與奈米晶體結構表面作用之相關應用的最佳奈米表面之晶體結構。
The present invention provides a pre-processing method of designing a nano-crystal structure. The method is used for obtaining electric field and magnetic field distribution in space of a nano-crystal structure after photo reaction. The pre-processing method comprises: step A: defining relationships between: a crystal lattice size, a lattice arrangement and a boundary length of the nano-crystal structure, and an electromagnetic field generated after performing photo reaction to the nano-crystal structure; and step B: obtaining a waveform of the electromagnetic field according to the relationships defined in step A. According to the abovementioned method, far-field and near-field distribution of the electromagnetic wave of the nano-crystal structure after photo reaction can be obtained. As a result, an optimal nano-surface crystal structure for applications related to light and nano-crystal structure surface reaction can therefore be designed.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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