 技術摘要 / Our Technology： |
本發明係有關一種矽基光偵測器,包括:一矽基板;一二氧化矽層,形成在該矽基板上;一對金屬電極,形成在該矽基板上,且設置在該二氧化矽層的二側;以及一奈米陣列結構層,形成在該二氧化矽層上,該奈米陣列結構層包含由一金屬氧化物半導體材料所製成的複數個奈米微結構,該奈米陣列結構層的二側係與該對金屬電極接觸,且該對金屬電極與該矽基板、該二氧化矽層及該奈米陣列結構層接觸。由於本發明之矽基光偵測器具有奈米陣列結構層,因而本發明相對於習知光偵測器在紫外光區域、可見光區與近紅外光區的光響應,具有提升的效能。
The present invention relates to a Si-based photo-detector which comprises: a Si substrate; a SiO2 layer formed on the Si substrate; a pair of metal electrodes formed on the Si substrate and disposed on two sides of the SiO2 layer; and a nano array structure layer formed on the SiO2 layer. The nano array structure layer comprises a plurality of nano micro-structures made of metal oxide semiconductor material, two sides of the nano array structure layer are in contact with the pair of metal electrodes, and the pair of metal electrodes is in contact with the Si substrate, the SiO2 layer and the nano array structure layer. Since the Si-based photo-detector of the present invention has a nano array structure layer, the present invention may have an improved effect on the photo-responsivity in the ultraviolet region, the visible region, and near infrared region, comparing to the traditional photo-detector.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台