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 Self-focused ion beam lithography using dielectric lens
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刊登日期：2017/01/19 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
9,666,441
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2015/09/14)
中國 (2016/07/13)
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| ‧ 發明人/PI |
高振宏,陳敏璋,楊博軒,
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| ‧ 單位 |
台積電-臺灣大學聯合研發中心
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
A semiconductor device and method of manufacturing are presented in which features of reduced size are formed using an irradiated mask material. In an embodiment a mask material that has been irradiated with charged ions is utilized to focus a subsequent irradiation process. In another embodiment the mask material is irradiated in order to reshape the mask material and reduce the size of openings formed within the mask material. Through such processes the limits of photolithography may be circumvented and smaller feature sizes may be achieved.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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