技術摘要 / Our Technology: |
本發明實施例揭露一種光電元件及製法,利用溶液法製作光電元件的p型過渡金屬氧化物層、主動層、n型過渡金屬氧化物層,其中p型過渡金屬氧化物層包含一氧化鎳或一氧化銅層,或者一混合層,其包含氧化鎳或氧化銅混合一n型過渡金屬氧化物。
Embodiments of this invention disclose optoelectronic devices and their producing methods. The embodiments employ solution processes to produce p-type transition metal oxide layer, active layer, and n-type transition metal oxide layer of the optoelectronic devices. The p-type transition metal oxide layer comprises a copper oxide (CuO) layer or a nickel oxide (NiO) layer or a mixing layer, which comprises CuO or NiO mixed with an n-type transition metal oxide.
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專利簡述 / Intellectual Properties: |
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聯繫方式 / Contact: |
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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Email:ordiac@ntu.edu.tw |
電話/Tel:02-3366-9945 |
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