據模式製程鄰近效應修正方法與裝置
刊登日期:2014/05/21
  ‧ 專利名稱 據模式製程鄰近效應修正方法與裝置
  ‧ 專利證書號 8578303B1
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
美國 (2012/07/06)
 
  ‧ 發明人/PI 蔡坤諭,蘇義盛,
  ‧ 單位 電機工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
A method for compensating an effect of a patterning process is illustrated. The main concept of the method for compensating the effect of the patterning process is to add or subtract the correction amounts for all segments according to the set of the comparison values at the set of the evaluation points. Compared with the delta-chrome optical proximity correction method, the run time of the method for compensating the effect of the patterning process is reduced, the memory usage of the method for compensating the effect of the patterning process not increased, and the correction accuracy of the method for compensating the effect of the patterning process is not reduced.




專利簡述 / Intellectual Properties:




 

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