一種寬頻低雜訊放大器之設計方法
  ‧ 專利名稱 寬頻低雜訊放大器之設計方法
  ‧ 專利證書號 I462470
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2011/10/06)
  ‧ 發明人 羅育聰 , 江簡富,
 
技術摘要:
本發明係為一種寬頻低雜訊放大器之設計方法,其係配合模擬軟體進行之,寬頻低雜訊放大器之設計方法主要是在共閘極放大電路和共源極放大電路間串聯一中間匹配電路,並根據預定的設計頻段以推導出共振頻率,並在選擇共閘極放大電路及共源極放大電路的電晶體規格及偏壓後,再藉由阻抗匹配的技巧,使得共閘極放大電路的低頻段及高頻段達到共軛匹配,又藉由共源極放大電路補償中頻段增益損失,藉此不但可使組合後的寬頻低雜訊放大器在整個寬頻段皆有足夠之增益,還可以快速及有效的完成一寬頻低雜訊放大器之設計。
The present invention discloses a method for designing a wideband low-noise amplifier (LNA), which is processed with a simulation software. The method is mainly to design the wideband LNA constructed by cascading a common-gate amplifier and a common-source amplifier with an inter-stage matching network. According to a predetermined design frequency band to obtain a resonant frequency and choosing the transistor specifications of the common-gate amplifier and the common-source amplifier, conjugate matching at high and low bands of the common-gate amplifier and the common-source amplifier is achieved by applying the proposed matching technique and the mid-band gain is compensated for by the common-source amplifier. After combining the two amplifiers to form the wideband LNA, the wideband LNA provides enough gain in the entire band. The method of the invention quickly and efficiently enables a wideband LNA design.



聯繫方式
聯絡人: 研發處產學合作總中心 電話: (02)3366-9949
地 址: 10087台北市中正區思源街18號 臺大水源校區思源樓3樓