提升點接觸太陽能電池效率的最佳化結構
  ‧ 專利名稱
  ‧ 專利證書號
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2011/10/07)
美國 (2011/12/30)
  ‧ 發明人 陳曉微, 陳彥瑜 , 何偉碩 , 黃昱閎 , 劉致為 ,
 
技術摘要:
一種點接觸式太陽能電池結構包含半導體基板、前電極、第一鈍化層、第二鈍化層及背電極。半導體基板包含上表面、下表面及依次位於其間的射極層、基極層及複數個局部摻雜部。複數個局部摻雜部彼此間隔地位於下表面。前電極與第一鈍化層位於半導體基板的上表面。第二鈍化層位於半導體基板的下表面,且第二鈍化層具有複數個開口,分別對應局部摻雜部而配置。背電極位於第二鈍化層相對於半導體基板的另一側,並經由開口貫穿第二鈍化層而接觸局部摻雜部。其中,對應於前電極的至少一開口的寬度均大於其餘開口的寬度。

A point-contact solar cell structure includes a semiconductor substrate, a front electrode, a first passivation layer, a second passivation layer, and a rear electrode. The semiconductor substrate includes an upper surface, a lower surface, and an emitter layer, a base layer, and a plurality of locally doped regions located between the upper surface and the lower surface. The plurality of locally doped regions is located on the lower surface at intervals. The second passivation layer is located on the lower surface, and has a plurality of openings disposed respectively corresponding to the locally doped regions. The rear electrode is located on one side of the second passivation layer opposite to the semiconductor substrate, and passes through the second passivation layer via the openings to contact the locally doped regions. The width of at least one opening corresponding to the front electrode is greater than that of the remaining openings.



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