金屬輔助蝕刻法製作的矽微奈米結構晶圓回收技術
  ‧ 專利名稱 大面積薄型單晶矽之製作技術
  ‧ 專利證書號 I419202
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2011/12/06)
美國 (2012/03/07)
  ‧ 發明人 林清富, 林子敬, 許書嘉,
 
技術摘要:
本發明提供一種大面積薄型單晶矽之製作技術,特別是有關一種利用金屬輔助蝕刻技術於矽基板或矽晶圓上製作微米結構或奈米結構並脫離矽基板或晶圓的方法。此方法藉由金屬催化劑沈積、縱向蝕刻、側向蝕刻、而使微米結構或奈米結構剝離或轉移等簡單的製程,形成薄型單晶矽,並將基板表面處理後,使基板進行回收用於重複製作薄型單晶矽,而對基板做一充分的利用,達到降低其製作成本之目的與增加應用的範圍。

The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.



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