 技術摘要 / Our Technology： |
本發明揭露一種具有微米鐘粗化陣列結構之三五族太陽能電池及其製造方法,其係藉由控制有機金屬化學氣相沉積法中反應溫度及反應氣體流量比,於一本質型半導體層上磊晶成長一具有微米鐘粗化陣列結構的N型或P型半導體層。本發明除了具有加工程序簡易及低生產成本以外,更同時具備結構堅固、穩定度佳及高光電轉換效率之優勢。
The present invention discloses a III-V based solar cells having roughened microdome array structure and manufacturing method thereof. A n-type (or p-type) semiconductor layer having a roughened microdome array structure is epitaxially grown on an intrinsic semiconductor layer by controlling reaction temperatures and a flow ratio of reactive gases in a process of metal organic chemical vapor deposition (MOCVD) to form the III-V based solar cells of the present invention. In addition to simple processing procedure and low manufacturing cost, the present invention further brings the advantages of high structural robustness, good stability and high photoelectric conversion efficiency.
|
| 專利簡述 / Intellectual Properties： |
|
| |
聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
|
| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
|
|
| |
|
專利行銷平台