利用縮短侷限異質結構增加半導體光電元件發光頻寬之方法
  ‧ 專利名稱 利用縮短侷限異質結構增加半導體光電元件發光頻寬之方法
  ‧ 專利證書號 207341
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2003/06/20)
美國 (2003/12/04)
  ‧ 發明人 林清富 ,
 
技術摘要:
本發明係揭露一種利用縮短侷限異質結構增加半導體光電元件發光頻寬之方法,此方法係利用較短寬度之分離侷限異質結構(SCH)區域,以縮短電洞穿越此區域的時間,使電洞和電子進入量子井的時間差異變小,而達到較均勻的載體分佈,讓各個量子井皆獲得載體而提供發光增益,使半導體光電元件的發光頻寬增加。若是將此技術應用在可調波長半導體雷射之製作上,可使同一半導體雷射元件的波長可調變幅度變寬,對於光通訊系統的測試極為方便,也可直接應用於系統中,用以取代其他多樣性的元件,降低系統整合所需之成本者。
The present invention reveals a method of shortening the confinement hetero-structure to increase the light-emitting bandwidth of semiconductor optoelectronic device. In the invented method, a separated confinement hetero-structure (SCH) region with shorter width is used to shorten the time for holes to pass this region to have smaller time difference of entering the quantum well between holes and electrons, so as to have more uniform carrier distribution such that each quantum well obtains carriers to provide light-emission gain, and the light-emitting bandwidth of semiconductor optoelectronic device is increased. If the technique is applied in manufacture of tunable semiconductor laser, it is capable of increasing the tunable wavelength range of the same semiconductor laser device. In addition, it is very convenient for the test of optical fiber communication system, and can be applied directly in the system to replace the other versatile devices, so as to reduce the required cost for system integration.



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