高功率半導體雷射結構
  ‧ 專利名稱 高功率半導體雷射結構
  ‧ 專利證書號 I 220810
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2003/04/30)
美國 (2003/07/19)
  ‧ 發明人 林清富 , 蔡家偉 , 蔡志宏 , 蘇益信 ,
 
技術摘要:
本發明係關於一種高功率半導體雷射(high-power semiconductor laser)結構,其主要係在一發光半導體中形成一波導結構,且該波導結構具有可傳導光波之數個波導,各個波導和該發光半導體之間的界面形成可反射光波之反射面,該發光半導體之端面處形成數個劈切面,各個劈切面係由前述之波導延伸至該發光半導體之端面所形成,且係作為反射或透射出光波之結構,但至少具有一劈切面係可透射出光波之結構。另外,各個波導的方向至少在銜接所對應之劈切面的局部區域與該劈切面之方向不互相垂直。因此,本發明之高功率半導體雷射至少可提升功率至2W,同時遠比目前其它半導體雷射之繞射極限光束功率高,又具有平緩之近場分佈,而可減緩加速性光學破壞之發生。
The present invention is related to a high-power semiconductor laser structure. In the invention, a waveguiding structure, which has several waveguides capable of transmitting light-wave, is formed in a light-emitting semiconductor. At the interface between each waveguide and the light-emitting semiconductor, the reflection face capable of reflecting light-wave is formed. Several cleaved faces are formed at the end face position of light-emitting semiconductor. Each cleaved face is formed by extending the waveguide to the end face of light-emitting semiconductor, and is used as the structure for reflecting or transmitting light-wave, in which at least one cleaved face with the structure capable of transmitting light-wave is provided. In addition, for each waveguide direction, at least the direction of the local region of the cleaved face corresponding to the connection is not mutually perpendicular to that of the cleaved face. Thus, the power of the invented high power semiconductor laser can be at least raised to 2W, and the diffraction limit light beam power is far higher than that of the other semiconductor laser. In addition, the invented high power semiconductor laser has gradual near field distribution such that it can slow down the occurrence of catastrophic optical damage.



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