回收矽泥之方法
  ‧ 專利名稱 回收矽泥之方法
  ‧ 專利證書號 I347305
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2007/04/13)
美國 (2008/04/10)
  ‧ 發明人 藍崇文, 林彥志, 王珽玉, 戴怡德,
 
技術摘要:
於晶棒切割成矽晶片時,平均約有40%的矽因為切割線本身的寬度而損耗掉,這些矽泥以污泥的方式被丟棄或是回收碳化矽粒子後丟棄浪費了許多成本,若這些40%的切割矽泥可以回收再次成為矽晶棒生長的原料,就可以減低生產成本,而本發明則先將污泥進行酸洗步驟去除矽泥中之金屬物質,再進行高溫分離步驟,其中加熱溫度係介於矽及碳化矽熔點之間,並停留一段適當時間,使矽及碳化矽分離,並去除碳化矽,而可得到矽,藉此回收應用於太陽能晶體的原物料之用,更可以增加矽晶產量及降低成本。

In slicing a crystal bar into silicon wafers, an average of about 40% of silicon would be loss due to the widths of slicing wire saws themselves. The fact that the silicon slurry is discarded or discarded after recovering silicon carbide particles causes a large waste of cost. According to the present invention, the silicon slurry undergoes an acid washing step and a high temperature separation step, wherein the heating temperature is between the melting points of silicon and silicon carbide, and the silicon slurry is resident for an appropriate time, such that the silicon and silicon carbide would be separated to obtain silicon. The present invention could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost.



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