以電子束微影進行高速大面積高解析度連續圖形的曝寫方法
刊登日期:2014/05/21
  ‧ 專利名稱 以電子束微影進行高速大面積高解析度連續圖形的曝寫方法
  ‧ 專利證書號 I438818
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2011/02/22)
 
  ‧ 發明人/PI 顏家鈺,蔡坤諭,陳聯聖,邱陳龑,蔡幸芳,
  ‧ 單位 機械工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
一種電子束微影方法、電子束微影伺服控制方法及系統。依該電子束微影方法,係首先設定各子圖形的曝寫位置並驅動定位平台,將設置於其上的基材移動至設定的曝寫位置,接著量測基材的實際位置以判斷其與該設定的曝寫位置之誤差是否小於設定值。當誤差大於或等於設定值時調整定位平台的位置以補償該誤差,接著再次量測並判斷誤差是否小於設定值;當誤差小於設定值時,令電子束將對應該設定的曝寫位置之子圖形曝寫至基材上,接著更新該設定的曝寫位置以驅動定位平台,將基材移動至該設定的曝寫位置,直到曝寫至基材上的複數個子圖形接合成一完整的圖形為止。據此而達成以電子束進行大面積、高解析度及連續圖形之曝寫。
The invention provides an electron-beam lithographic method, and a system and method of controlling an electron-beam server. The electron-beam lithographic method comprises setting an exposure-written location to drive the positioning platform of each sub-figure and moving the substrate disposed on the platform to the exposure-written location, and measuring the actual location of the substrate for determining whether the deviation of the exposure-written location is smaller than a predetermined value. When the deviation of the location is larger than or equal to the predetermined value, the location of the positioning platform is adjusted to compensate for the error, and subsequently, another measurement is taken to see if the location deviation is smaller than the predetermined value, and if it is, the sub-figure disposed correspondingly on the exposure-written location is exposed and written onto the substrate, and the exposure-written location is updated so as to drive the positioning platform to move the substrate to the exposure-written location until a plurality of the sub-figures exposed and written on the substrate are connected with one another to form a complete figure, thereby providing a large-scale, high-resolution and continuous exposure-written process by electron-beams.



專利簡述 / Intellectual Properties:




 

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