駐極體揚聲裝置
  ‧ 專利名稱 駐極體揚聲裝置
  ‧ 專利證書號 US 8,855,339B2
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2012/07/18)
美國 (2012/08/16)
  ‧ 發明人 李世光, 陳昱吉, 陳漢龍 , 廖旭清, 蕭文欣,
 
技術摘要:
一種駐極體揚聲裝置,包括振膜、第一開孔電極及第一支撐件。振膜包括第一駐極體、第二駐極體、電極層及高分子層。第一駐極體與第二駐極體其中至少有一層是由膨體聚四氟乙烯(ePTFE)構成。第二駐極體疊置於第一駐極體之一側。電極層疊置於第一駐極體相對第二駐極體之另一側。高分子層為一疏水性材料。第二駐極體疊置於高分子層及第一駐極體之間,第一駐極體疊置於電極層及第二駐極體之間。第一開孔電極疊置於鄰近振膜之高分子層的一側。第一支撐件設置於振膜及第一開孔電極之間,且適於支撐第一開孔電極於振膜上以構成第一腔室。另提出一種製造駐極體揚聲裝置的方法。
An electret loudspeaker device including a diaphragm, a first perforated electrode and a first spacer is provided. The diaphragm includes a first electret, a second electret, a polymer layer and an electrode layer. At least one layer of the first electret or the second electret is formed by expanded polytetrafluoroethylene. The second electret is stacked on one side of the first electret, while the electrode layer is stacked on the opposite side of the first electret. The polymer layer is made of a hydrophobic material and is disposed on the second electret. The first perforated electrode is stacked on a first spacer and close to the polymer layer. The first spacer disposed to between the diaphragm and the first perforated electrode supports the first perforated electrode over the diaphragm and defines a first chamber. A fabrication method of the electret loudspeaker device is also provided.




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