使用LC共振器之24GHz CMOS低介入損失單刀單擲切換開關
  ‧ 專利名稱 使用LC共振器之24GHz CMOS低介入損失單刀單擲切換開關
  ‧ 專利證書號 I350053
US 7,675,382 B2
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2008/01/25)
美國 (2008/06/19)
  ‧ 發明人 鄧平援 , 江簡富 ,
 
技術摘要:
一種電晶體單刀單擲電路裝置,係至少包括一具有第一電晶體以及第二電晶體之電晶體單刀單擲電路,以及一電感電容(LC)共振器,該LC共振器之電感與電容係為一串聯架構,且該LC共振器之兩端係連接於第一電晶體之第一源極與第一汲極。又該電晶體單刀單擲電路裝置係採用一電感與電容串聯之LC共振器連接於該第一電晶體之該第一源極與該第一汲極,而該電感可與電晶體之寄生電容產生耦合共振,以降低寄生電容對於習知單刀單擲電路於選取較大寬度之開關電晶體時,湧現寄生電容所致生之訊號損耗。
A transistor single-pole-single-throw circuit device includes at least a transistor single-pole-single-throw circuit having a first transistor and a second transistor, and an inductor capacitor (LC) resonator having an inductor and a capacitor connected in series, allowing two ends of the LC resonator connected to the first source and the first drain of the first transistor, respectively. The transistor single-pole-single-throw circuit device adopts an LC resonator having an inductor and a capacitor connected in series to connect with the first source and the first drain of the first transistor. The inductor couples and resonates with a parasitic capacitance of the transistor, to reduce signal loss due to emerged parasitic capacitance when the conventional single-pole-single-throw circuit selects a switch transistor with a larger width.




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