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彭隆瀚等, “形成III-V族氮化物半導體元件中閘極絕緣體的方法 ROC I302353 (,” ROC I302353, Oct. 2008
彭隆瀚等, “二維週期性區域反轉之鐵電相光學非線性微晶格製造方法,” ROC I297802, Jun. 2008
Lung-Han Peng et al., “Method of forming a gate insulator in group III-V nitride semiconductor devices,” US 7253061, Jul. 2007
Lung-Han Peng et al., “Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes,” US 7,022,597 B2, 2006
Lung-Han Peng et al., ““Method of fabrication 2D ferroelectric nonlinear crystal with periodically inverted domains,”,” US 6,926,770 B1, 2005
彭隆瀚、林宜慶、房宜澂, “ 「以低電壓製作塊狀鐵電性材料區域反轉之方式」(issued 1/29/93),” 中華民國專利第186269號, 2003
Lung-Han Peng, Yi-Chin Lin, and Yi-Chen Fang,, “Method for bulk periodical poling of congruent grown ferroelectric nonlinear optical crystals by low electric field,” US patent 6,295,159, 2001
Lung-Han Peng, Yi-Chien Hsu, Chin-Yuan Chen, Jin-Kuo Ho, and Chao-Nien Huang, “Method for oxidizing nitride material enhanced by illumination with UV light at room temperature,” US patent 6,190,508, 2001
彭隆瀚、莊志偉、何晉國、陳金源，, “Method for etching nitride,” Japan patent 3,076,783, 2000
彭隆瀚、莊志偉、何晉國、陳金源，, “氮化物材料的蝕刻方法,” 中華民國專利第115749號, 2000
彭隆瀚、莊志偉、何晉國、陳金源，, “氮化物半導體材料的蝕刻方法,” 中華人民共和國專利第62156號, 2000
彭隆瀚、徐易千、莊志偉、何晉國、黃兆年、陳金源, “室溫紫外增益之氮化物的材料的氧化膜成長方法,” 中華民國專利第107882號, 1999
Lung-Han Peng, Chih-Wei, Jin-Kuo Ho, and Chih-Yuan Chen, “Method for etching nitride,” US patent 5,895,223, 1999 |
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