 技術摘要： |
一種雙能障超晶格紅外線偵測器，能夠於相對高溫及低偏壓操作點下操作，改善習知紅外線偵測器操作溫度過低、偏壓操作點過高的缺點，其係採用前阻擋層和後梯度阻擋層包夾超晶格結構並結合多量子井，因此能夠於相對較高的溫度及偏壓操作點下運作，提供更好的光電流響應。本發明除了能夠藉由雙能障設計提升光電子穿透率並降低暗電子穿透率，同時也能夠利用電子補償機制降低偏壓操作點，藉此改善電容飽和問題，進而提昇紅外線偵測器的紅外線偵測率。
A double energy barrier superlattice infrared detector, operable at a higher temperature and lower bias operating point than conventional infrared detectors, includes a front baffling layer, a rear gradient baffling layer, a superlattice structure enclosed in the front baffling layer and the rear gradient baffling layer, and a plurality of quantum wells coupled thereto so as for the double energy barrier superlattice infrared detector to operate at a relatively high temperature and low bias operating point, provide an enhanced photocurrent response, feature enhancement of bright electron permeability and reduction of dark electron permeability by a double energy barrier, allow the bias operating point to be lowered by an electron compensation mechanism, mitigate capacitance saturation, and advantageously increase the infrared detection rate.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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