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 金屬通道電晶體Metallic transistors prepared by the atomic layer deposition and doping techniques |
刊登日期：2018/01/11 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
10,269,982
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2016/07/08)
中國 (2016/10/19)
中華民國 (2016/11/18)
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| ‧ 發明人 |
陳敏璋, 鄭柏賢, |
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| 技術摘要： |
In a method for manufacturing a metallic-channel device, a metallic layer is formed on a substrate. The metallic layer is formed by an atomic layer deposition technique and has a first thickness. An insulating layer is formed over the metallic layer. A gate contact layer is formed over the insulating layer. The formed layers are processed to remove the gate contact layer, the insulating layer, and a portion of the metallic layer from a source-drain region. A remaining portion of the metallic layer on the source-drain region has a second thickness that is smaller than the first thickness. Source and drain metal contacts are formed over the remaining portion of the metallic layer.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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專利行銷平台