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 High electron mobility transistors |
刊登日期：2019/04/03 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
10,269,923
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2017/09/13)
中華民國 (2017/10/18)
中國 (2017/10/19)
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| ‧ 發明人 |
陳敏璋, 施奐宇, |
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| 技術摘要： |
In a method of manufacturing a high-electron mobility transistor (HEMT), a first Group III-V semiconductor layer is formed on a substrate. The first Group III-V semiconductor layer is patterned to form a fin and a recessed surface. A second Group III-V semiconductor layer is formed to cover a top surface and all side surfaces of the fin and the recessed surface. The second Group III-V semiconductor layer is formed by a plasma-enhanced atomic layer deposition, in which a plasma treatment is performed on every time an as-deposited mono-layer is formed.
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聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
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| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
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