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 紅外光光偵測器
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刊登日期：2014/05/21 |
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| ‧ 專利名稱 |
紅外光光偵測器 |
| ‧ 專利證書號 |
I 220790
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
中華民國 (2003/04/10)
美國 (2004/04/01)
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| ‧ 發明人/PI |
許博欽 ,張書通 ,黃仕澔 ,劉致為 ,
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| ‧ 單位 |
電子工程學研究所
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
本案係為一種長波長光偵測器，可偵測波長超過材料能隙(bandgap)波長之光，其包含：一導體層；一包含一或多層量子井、點之半導體層，用以侷限載子於位障內；一絕緣層，設於該導體層與該半導體層之間；以及一電壓源，其正(負)極電連接於該導體層而負(正)極電連接於該包含一或多層量子井、點之p型(n型)半導體層，其係用以提供一偏壓來產生一量子穿透效應(quantum tunneling)，使載子穿透該絕緣層而形成電流。當照射紅外光時，位障中的載子便可吸收該能量跳出位障，被電極所接收形成光電流。
Metal-oxide-semiconductor (MOS) tunneling diodes can be utilized as infrared photodetectors. Using Ge quantum dots as semiconductor layers in MOS diodes, carriers were confined in the quantum well at low temperature. The carriers in the quantum well would occupy different energy levels. By absorbing infrared, the carriers gain enough energy to jump out the energy barrier, called intraband transition. These carriers were collected by electrode and the infrared was detected. This infrared photodetector can detect the light which the photon energy is smaller than the semiconductor material bandgap in MOS detectors. The detectors can also detect the light which the photon energy is larger than the semiconductor material bandgap by interband transition.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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