|
 Enhancement of Dielectric Constant with Layered Oxide structure |
刊登日期：2020/08/18 |
|
|
|
|
| ‧ 專利名稱 |
|
| ‧ 專利證書號 |
US10748774B2
US11114301B2
|
| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2018/11/14)
中國 (2018/11/29)
中華民國 (2018/11/29)
美國 (2020/08/03)
|
| ‧ 發明人 |
楊博宇, 林延勳, 萬獻文, 林耕雍, 郭瑞年, 洪銘輝, |
|
|
| |
| 技術摘要： |
A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.
|
聯繫方式 |
| 聯絡人：
研發處產學合作總中心 |
電話：
(02)3366-9949 |
|
| 地 址：
10617臺北市大安區羅斯福路四段1號 禮賢樓六樓608室 |
|
|
| |
|
| |
 |
專利行銷平台