 技術摘要 / Our Technology： |
本發明為一種具有場效電晶體(FET)整合式共面波導(CPW)結構之行波切換器。此具有場效電晶體整合式共面波導結構係結合電晶體、信號線、以及接地,而可以降低由於寄生電感所造成對於切換器操作頻率之限制。此種具有場效電晶體整合式共面波導之結構可以有效地提高切換器之操作頻率,且縮小晶片面積。藉由縮小的晶片面積,本發明使用標準砷化鎵(GaAs)高電子遷移率電晶體(HEMT)單晶微波積體電路(MMIC)製程的設計可降低行波切換器之製造成本。
A traveling-wave switch includes a FET-integrated Coplanar Waveguide (CPW) line structure. The FET-integrated CPW line structure incorporates a transistor, a signal line, and the ground, that can be used to eliminate the limitations imposed by the parasitic inductance of the prior art on the operation frequency of the switch. The signal line is connected directly to the drain of the transistor, eliminating the parasitic inductance caused by the connection wire between the signal line and the transistor. The source of the transistor is coupled directly to the ground of the coplanar waveguide line, thus eliminating the parasitic inductance between the transistor and ground, and raising the operation frequency of the switch.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台