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 一應用於鍺基金氧半元件之矽披覆層方法A Si passivation method for germanium-based MOS(Metal Oxides Semiconductor) device
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刊登日期：2022/02/08 |
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| ‧ 專利名稱 |
一應用於鍺基金氧半元件之矽披覆層方法A Si passivation method for germanium-based MOS(Metal Oxides Semiconductor) device |
| ‧ 專利證書號 |
US11749738B2
11,245,023
12,113,116
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2020/07/31)
中華民國 (2020/11/25)
中國 (2020/12/02)
美國 (2022/02/06)
美國 (2023/07/14)
美國 (2024/07/30)
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| ‧ 發明人/PI |
洪銘輝,郭瑞年,萬獻文,楊博宇,鄭伊婷,洪毓傑,
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| ‧ 單位 |
台積電-臺灣大學聯合研發中心
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
A semiconductor device includes a substrate, a semiconductor fin, a silicon layer, a gate structure, gate spacers, and source/drain structures. The semiconductor fin is over the substrate. The silicon layer is over the semiconductor fin. The gate structure is over the silicon layer, in which the gate structure includes an interfacial layer over the silicon layer, a gate dielectric layer over the interfacial layer, and a gate electrode over the gate dielectric layer. The gate spacers are on opposite sidewalls of the gate structure and in contact with the interfacial layer of the gate structure, in which a bottom surface of the interfacial layer is higher than bottom surfaces of the gate spacers. The source/drain structures are on opposite sides of the gate structure.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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