|
 粒子束微影鄰近應修正方法
|
刊登日期：2014/05/21 |
|
|
|
|
|
| ‧ 專利名稱 |
粒子束微影鄰近應修正方法 |
| ‧ 專利證書號 |
I436174
8539392
|
| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
中華民國 (2011/07/05)
美國 (2012/02/17)
|
|
|
| |
| ‧ 發明人/PI |
蔡坤諭 ,劉俊宏 ,黃飛歷 ,田沛霖 ,
|
| ‧ 單位 |
電機工程學系
|
| ‧ 簡歷/Experience |
|
|
| 技術摘要 / Our Technology： |
A method for compensating proximity effects of particle beam lithography processes is provided. The method includes the following steps. A control pattern is provided. A dissection process is provided. A set of control points are provided. The control pattern is defined as an input pattern of a lithography process. A target pattern is provided. A set of target points are produced. A set of target measurement values are provided. An actual pattern is defined. A set of actual measurement values are provided. A set of comparison values are calculated. An adjusting strategy is provided. A corrected pattern is produced. The corrected pattern is defined as an updated input of the lithography process.
|
| 專利簡述 / Intellectual Properties： |
|
| |
聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
|
| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
|
|
| |
|
| |
 |
專利行銷平台