組成高遷移率鍺互補式金屬氧化物半導體之方法
  ‧ 專利名稱
  ‧ 專利證書號
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2012/05/18)
 
  ‧ 發明人/PI 林京毅,陳彥廷,劉致為,
  ‧ 單位 電子工程學研究所
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
本發明係關於一種鍺互補式金屬氧化物半導體(CMOS)裝置及其製作方法,尤指一種可提高運算速度及驅動能力之鍺互補式金屬氧化物半導體裝置及其製作方法。其主要係於一具有(110)晶體平面之鍺基板上形成一鍺磊晶層,並於鍺磊晶層形成一p井區及一n井區;以非等向性濕蝕刻於p井區形成一具有{111}晶體平面之V形槽後,分別於p井區及n井區形成一NMOS及一PMOS,並令NMOS之閘極位於V形槽中。此一構造可令NMOS及PMOS之通道分別位於<111>方向及<110>方向,可獲得具有最高載子遷移率之NMOS及PMOS裝置。
The present invention is related to a germanium complementary metal oxide semiconductor (CMOS) device and its preparation method, which is a germanium complementary metal oxide semiconductor device capable of enhancing the operation speed and the driving capability and its preparation method. The present invention forms a germanium epitaxial layer on a germanium substrate containing the (110) crystal plane, and forms a p well region and a n well region on the germanium epitaxial layer; after a V-shape groove containing the {111} crystal plane is formed into a p well region by the anisotropic wet etching, a NMOS and a PMOS are separately formed into the p and n well regions and the gate of the NMOS is located into the V-shape groove. The disclosed structure can make the passages of the NMOS and PMOS separately located in the directions of < 111> and < 110> , capable of obtaining the NMOS and PMOS devices containing the highest carrier mobility.



專利簡述 / Intellectual Properties:




 

聯繫方式 / Contact:
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