利用介電質奈米顆粒填入V型缺陷來降低光電與電子元件之漏電流
  ‧ 專利名稱 半導體元件及其製造方法
  ‧ 專利證書號 I504018
US9,147,805
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2013/10/03)
美國 (2013/11/29)
 
  ‧ 發明人/PI 楊志忠,陳鴻祥,丁紹瀅,廖哲浩,陳志諺,謝劼,陳浩宗,姚毓峰,葉東明,
  ‧ 單位 光電工程學研究所
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
A semiconductor device including a Si (110) substrate, a buffer layer, a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer is provided. The Si (110) substrate has a plurality of trenches. Each trench at least extends along a first direction, and the first direction is parallel to a <1-10> crystal direction of the Si (110) substrate. The buffer layer is located on the Si (110) substrate and exposes the trenches. The first type doped semiconductor layer is located on the buffer layer and covers the trenches. The light-emitting layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the light-emitting layer. A fabrication method of a semiconductor device is also provided.




聯繫方式 / Contact:
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Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945