生物分子檢測系統晶片
  ‧ 專利名稱
  ‧ 專利證書號
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
美國 (2012/06/14)
中華民國 (2013/01/03)
美國 (2013/04/25)
 
  ‧ 發明人/PI 黃哲偉 ,黃毓傑 ,嚴沛文 ,薛孝亭,呂學士,林致廷,
  ‧ 單位 電子工程學研究所
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
一種分子感測器裝置,其包括至少一分子感測器。分子感測器包括半導體基板、底閘極、源極部、汲極部與半導體奈米線。底閘極例如為第一多晶矽層,形成於半導體基板上,且電性隔離半導體基板。源極部形成於半導體基板上,且電性隔離半導體基板。汲極部形成於半導體基板上,且電性隔離半導體基板。半導體奈米線連接於源極部與汲極部之間,形成於底閘極之上,但電性隔離底閘極,且具有修飾層於其上以補抓特定分子。源極部、汲極部與半導體奈米線例如為第二多晶矽層。底閘極接收特定電壓,以改變半導體奈米線的表面帶電載子數量。

A molecule sensor included in a molecule sensor device has a semiconductor substrate, a bottom gate, a source portion, a drain portion, and a nano-scale semiconductor wire. The bottom gate is for example a poly-silicon layer formed on the semiconductor substrate and electrically insulated from the semiconductor substrate. The source portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The drain portion is formed on the semiconductor substrate and insulated from the semiconductor substrate. The nano-scale semiconductor wire is connected between the source portion and the drain portion, formed on the bottom gate, insulated from the bottom gate, and has a decoration layer thereon for capturing a molecular. The source portion, drain portion, and nano-wire semiconductor wire are for example another poly-silicon layer. The bottom gate receives a specified voltage to change an amount of surface charge carriers of the nano-scale semiconductor wire.




聯繫方式 / Contact:
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU
Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945