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 Transfer-free, direct growth of graphene by atomic layer deposition on oxide surface
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刊登日期：2017/11/30 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
10,290,808
10,756,271
10,461,254
9,923,142 B2
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2016/05/31)
美國 (2018/03/19)
美國 (2019/05/10)
美國 (2019/10/28)
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| ‧ 發明人/PI |
陳敏璋,謝忠諺,
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| ‧ 單位 |
台積電-臺灣大學聯合研發中心
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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