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 金屬通道電晶體Metallic transistors prepared by the atomic layer deposition and doping techniques
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刊登日期：2018/01/11 |
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| ‧ 專利名稱 |
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| ‧ 專利證書號 |
10,269,982
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
美國 (2016/07/08)
中國 (2016/10/19)
中華民國 (2016/11/18)
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| ‧ 發明人/PI |
陳敏璋,鄭柏賢,
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| ‧ 單位 |
台積電-臺灣大學聯合研發中心
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
In a method for manufacturing a metallic-channel device, a metallic layer is formed on a substrate. The metallic layer is formed by an atomic layer deposition technique and has a first thickness. An insulating layer is formed over the metallic layer. A gate contact layer is formed over the insulating layer. The formed layers are processed to remove the gate contact layer, the insulating layer, and a portion of the metallic layer from a source-drain region. A remaining portion of the metallic layer on the source-drain region has a second thickness that is smaller than the first thickness. Source and drain metal contacts are formed over the remaining portion of the metallic layer.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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