 技術摘要 / Our Technology： |
於製作場效電晶體之方法中，由第一半導體材料所製成之鰭片式結構係形成，以使鰭片式結構從設置於基材上之隔離絕緣層突伸出。閘極結構係形成於鰭片式結構之一部分上，而定義出通道區域、源極區域和汲極區域於鰭片式結構中。於閘極結構形成後，雷射退火係進行於鰭片式結構上。
In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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專利行銷平台