技術摘要 / Our Technology: |
本案係為一種將應變矽圍繞在矽鍺中心體所構成之鰭形場效電晶體,其包含:一絕緣層上矽(SOI)基底;一矽鍺中心體,用以產生應變矽;一圍繞矽鍺中心體的的應變矽通道,使載子在傳輸方向的遷移率增加,使其有較大的電流,較快的速度;一氧化層;一複晶矽閘極電極(或金屬閘極電極);以及源極、汲極在鰭形通道兩端,使其形成場效電晶體結構。
The strained Si surrounding the SiGe embedded body on the SOI (silicon on insulator) substrate to form novel FinFET. The mobility in the channel is enhanced due to the strain of Si channel. The strained Si FinFET is composed of a SOI substrate, an embedded SiGe body, a strained Si channel surrounding layer, a oxide layer, a ploy Si gate electrode (or metal gate electrode), source and drain.
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專利簡述 / Intellectual Properties: |
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聯繫方式 / Contact: |
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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Email:ordiac@ntu.edu.tw |
電話/Tel:02-3366-9945 |
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