技術摘要 / Our Technology: |
本發明係揭露一種高效率之發光元件及其製造方法,首先提供一絕緣基板,並在絕緣基板上先後形成一電極層與種子層,接著於種子層上形成複數氧化鋅微結構與複數第一絕緣單元,其中每一個氧化鋅微結構係位於相鄰之第一絕緣單元之間,再來於每一個氧化鋅微結構之側壁形成一氮化物層,最後於氮化物層表面形成一電極層即完成此發光元件。本發明可利用在氧化鋅微結構之側壁上形成氮化物層之方式製作發光效率極佳之發光元件,同時更可大幅降低製造成本。
The present invention discloses a high-efficiency lighting device and a method for fabricating the same. The method of the present invention comprises steps: providing an insulation substrate and sequentially forming an electrode layer and a seed layer on the insulation layer; forming a plurality of zinc oxide micro and nano structures and a plurality of first insulation units on the seed layer, wherein each zinc oxide micro and nano structure is arranged between two neighboring first insulation units; forming a nitride layer on the side wall of each zinc oxide micro and nano structure; and forming an electrode layer on each nitride layer. The present invention achieves a high-efficiency lighting device via growing nitride layers on the side walls of zinc oxide micro and nano structures. Further, the present invention can reduce the fabrication cost.
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專利簡述 / Intellectual Properties: |
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聯繫方式 / Contact: |
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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Email:ordiac@ntu.edu.tw |
電話/Tel:02-3366-9945 |
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