控制多波長發光二極體顏色對比的方法
  ‧ 專利名稱 利用奈米晶體製作多波長發光二極體之方法及其發光元件
  ‧ 專利證書號 I331408
7875478
  ‧ 專利權人 國立臺灣大學
  ‧ 專利國家
    (申請日)
中華民國 (2006/11/08)
美國 (2007/06/26)
 
  ‧ 發明人/PI 葉東明 ,陳鴻祥 ,呂志鋒 ,黃吉豐 ,唐宗毅 ,黃建璋 ,盧彥丞 ,楊志忠 ,黃政傑 ,陳永昇 ,
  ‧ 單位 光電工程學研究所
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
一種控制多波長發光二極體顏色對比的方法,至少包括提高具有多重量子井的發光二極體之介面溫度(junction tem-perature),使電洞分佈至發光二極體中較深層之量子井,提高較深層之量子井之發光強度,藉以控制發光二極體所發射之多波長的相對強度比例。本發明之方法以例如改變發光二極體之P型電極層的厚度為手段而控制其接觸阻抗,從而調變其元件介面溫度,又例如改變其平台區域(mesa area)之大小,以控制其相對散熱表面積從而調變其元件介面溫度。
A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.





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