增進光電元件中光吸收層特性之技術與包含其光吸收層之光電材料
刊登日期:2014/05/21
  ‧ 專利名稱 製造摻雜Bi之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池
  ‧ 專利證書號 I500170
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2012/11/20)
美國 (2012/11/21)
 
  ‧ 發明人/PI 呂宗昕,陳富珊,
  ‧ 單位 化學工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
A technique for enhancing the characterization of the light absorber layers and the solar cells employing the light absorber layers are provided. A method for preparing the light absorber layers includes that bismuth-doped IB-IIIA-VIA compounds are synthesized via heating Group IB, Group IIIA and bismuth compound in an atmosphere containing Group VIA species. Additionally, a technique for preparing a solar cell employing IB-IIIA-VIA compounds containing bismuth species, that are prepared via the aforementioned method and further applied to manufacture photovoltaic to materials, is also provided.




專利簡述 / Intellectual Properties:




 

聯繫方式 / Contact:
臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU
Email:ordiac@ntu.edu.tw 電話/Tel:02-3366-9945