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 增進光電元件中光吸收層特性之技術與包含其光吸收層之光電材料
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刊登日期：2014/05/21 |
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| ‧ 專利名稱 |
製造摻雜Ｂｉ之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池 |
| ‧ 專利證書號 |
I500170
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| ‧ 專利權人 |
國立臺灣大學 |
‧ 專利國家
(申請日) |
中華民國 (2012/11/20)
美國 (2012/11/21)
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| ‧ 發明人/PI |
呂宗昕,陳富珊,
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| ‧ 單位 |
化學工程學系
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| ‧ 簡歷/Experience |
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| 技術摘要 / Our Technology： |
A technique for enhancing the characterization of the light absorber layers and the solar cells employing the light absorber layers are provided. A method for preparing the light absorber layers includes that bismuth-doped IB-IIIA-VIA compounds are synthesized via heating Group IB, Group IIIA and bismuth compound in an atmosphere containing Group VIA species. Additionally, a technique for preparing a solar cell employing IB-IIIA-VIA compounds containing bismuth species, that are prepared via the aforementioned method and further applied to manufacture photovoltaic to materials, is also provided.
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| 專利簡述 / Intellectual Properties： |
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聯繫方式 / Contact： |
| 臺大產學合作總中心 / Center of Industry-Academia Collaboration, NTU |
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| Email：ordiac@ntu.edu.tw |
電話/Tel：02-3366-9945 |
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