電子束漂移偵測裝置及偵測電子束漂移之方法
  ‧ 專利名稱 電子束漂移偵測裝置及偵測電子束漂移之方法
  ‧ 專利證書號 I426359
US9165746B2
  ‧ 專利權人 臺大
  ‧ 專利國家
    (申請日)
中華民國 (2011/04/11)
美國 (2011/09/23)
 
  ‧ 發明人/PI 顏家鈺,陳永耀,郭逸宏,吳政儒 ,
  ‧ 單位 機械工程學系
  ‧ 簡歷/Experience
技術摘要 / Our Technology:
一種電子束漂移偵測裝置及方法,該方法主要係於工作件之特定位置設置具有預定形狀之特徵識別圖案,再透過經聚焦與偏折的電子束對工作件之表面與特徵識別圖案進行掃描,並感測於工作件之表面與特徵識別圖案上所產生的散射電子與二次電子,且發出對應之感測信號,之後,接收該感測信號,同時對該感測信號進行影像處理,以得到對應於該特徵識別圖案之電子影像,並且藉由比較該電子影像與該特徵識別圖案之預定形狀而測量該電子束的偏移程度。據此,能夠有效地測量電子束漂移現象。
This invention provides an electron beam drift detection device and a method for detecting electron beam drift, the method comprising disposing a characterized identification pattern having a particular shape at a specific position of a workpiece; performing a scan on the surface of the workpiece and the characterized identification pattern by an electron beam having undergone focusing and deviating processes; detecting electrons and second electrons generated from the surface of the workpiece and the characterized identification pattern for issuing a corresponding detection signal; and receiving the detection signal for image processing to obtain an electron image corresponding to the characterized identification pattern and to measure the degree of deviation of the electron beam by comparing the electron image and the characterized identification pattern, thereby effectively measuring electron beam drift.



專利簡述 / Intellectual Properties:




 

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